ds30301 rev. 4 - 2 1 of 3 2N7002T www.diodes.com diodes incorporated 2N7002T n-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package also available in lead free version maximum ratings @ t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma total power dissipation (note 1) p d 150 mw thermal resistance, junction to ambient r ja 833 c/w operating and storage temperature range t j ,t stg -55 to +150 c mechanical data case: sot-523, molded plastic case material ul flammability rating: 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 3 terminal connections: see diagram marking: 72 (see page 3) ordering & date code information, see page 3 weight: 0.002 grams (approx.) t c u d o r p w e n a m j l d b d g c s h k g t o pview n sot-523 dim min max typ a 0.15 0.30 0.22 b 0.75 0.85 0.80 c 1.45 1.75 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 j 0.00 0.10 0.05 k 0.60 0.80 0.75 l 0.10 0.30 0.22 m 0.10 0.20 0.12 n 0.45 0.65 0.50 0 8 all dimensions in mm note: 1. device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout as shown on diodes, inc. suggested pad layout ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. source gate d ra i n
ds30301 rev. 4 - 2 2 of 3 2N7002T www.diodes.com electrical chacteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 60 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss 10 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) 1.0 2.0 v v ds = v gs , i d =-250 a static drain-source on-resistance @ t j = 25c @t j = 125c r ds (on) 2.0 4.4 7.5 13.5 v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d(on) 0.5 1.0 a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 11 25 pf reverse transfer capacitance c rss 2.0 5.0 pf switching characteristics turn-on delay time t d(on) 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 ,v gen = 10v, r gen = 25 turn-off delay time t d(off) 11 20 ns note: 2. short duration test pulse used to minimize self-heating effect. t c u d o r p w e n 0 0.2 0.1 0.4 0.3 0.5 0.6 0.7 0.8 0.9 1 012 3 4 5 i , drain-source current (a) d v , drain-source voltage (v) ds fi g . 1 on-re g ion characteristics v = 10,7,6v gs v=5v gs v=4v gs v=3v gs 0.6 1 1.4 1.8 00.2 r , n o rmalized ds(on) drain-source on-resistance i , drain-source current (a) d fig. 2 on-resistance variation with gate voltage and drain-source current v=3v gs v=4v gs v = 5, 6, 7, 10v gs 2.2 0.4 0.6 0.8 1.0 0.7 0.8 0.9 1.1 1 1.2 -50 -25 0 25 50 75 100 125 150 v,n o rmalized thresh o ld v o ltage gs(th) t , junction temperature ( c) j fig. 3 gate threshold variation with temperature 0.4 0.8 0.6 1.2 1.8 1.6 1.4 1 2.2 2 -50 -25 02550 75 100 125 150 r,n o rmalized o n-resistance ds(on) t , junction temperature ( c) j fig. 4 on-resistance variation with temperature v = 10v gs i = 500ma d
ds30301 rev. 4 - 2 3 of 3 2N7002T www.diodes.com t c u d o r p w e n 0 10 20 30 50 40 60 0510 15 20 25 c, capacitance (pf) v , drain-source voltage (v) ds fi g .5 t y pical capacitance c iss c oss c rss 0.0 1.0 0.5 2.0 3.0 2.5 1.5 4.5 4.0 3.5 5.0 0 2 4 6 8 10 v , gate-source voltage (v) gs fig. 6 on-resistance vs. gate-source voltage i=50ma d ordering information (note 3) device packaging shipping 2N7002T-7 sot-523 3000/tape & reel notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: 2N7002T-7-f. marking information 72ym 72 = product type marking code ym = date code marking y = year (ex: n = 2002) m = month (ex: 9 = september) date code key year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
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